| PART |
Description |
Maker |
| EC2-12ND EC2-12SND EC2-24ND EC2-24SND EC2-3ND EC2- |
High Insulation, High breakdown voltage, compact and lightweight, Surface mounting type 高绝缘，高击穿电压，结构紧凑，重量轻，表面安装型
Driver IC; Package/Case:24-SSOP; Supply Voltage Max:5.25V; Leaded Process Compatible:No; Operating Temp. Max:70 C; Operating Temp. Min:-10 C; Peak Reflow Compatible (260 C):No; Frequency:20GHz; Interface Type:Serial
|
TE Connectivity, Ltd.
NEC, Corp.
NEC Corp.
|
| CMPD2004S CMPD2003 CMPD2003C CMPD2003S CMPD2004 CM |
SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE
SMD Switching Diode Dual: High Voltage: Common Anode
|
CENTRAL[Central Semiconductor Corp]
|
| 1SS398 |
Diode Silicon Epitaxial Planar Diode High Voltage High Speed Switching Applications
|
TOSHIBA
|
| 1SS397 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
|
TOSHIBA
|
| BAS70-07W BAS7007W Q62702-A1186 |
Silicon Schottky Diode (General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| DS3501U DS3501UR |
High-Voltage, NV, I2C POT with Temp Sensor and Lookup Table
|
Maxim Integrated Products
|
| BY559X-1500U |
Damper diode fast, high-voltage 1500 V, SILICON, RECTIFIER DIODE, TO-220
Damper diode ultra fast, high-voltage
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| JHV3680 JHV36 JHV3612 JHV3616 JHV3620 JHV3624 JHV3 |
High Voltage Rectifier; Package: SEE_FACTORY; IO (A): 54; IFSM (A): 1200; Vrwm (V): 28000; IR (µA): 6000; SILICON, VOLTAGE MULTIPLIER DIODE
HIGH VOLTAGE RECTIFIER ASSEMBLY
|
MICROSEMI[Microsemi Corporation]
|
| DS3501 DS3501UR DS3501UT |
High-Voltage, NV, I2C POT with Temp Sensor and Lookup Table 高电压，内华达州和I2C壶与温度传感器和查找
|
Maxim Integrated Products, Inc.
|
| RM600DG-130S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM1200HE-66S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| 1SS311 |
Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching Applications
|
TOSHIBA
|
